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| MMBZ27VCWT1G 40 Watt Peak Power Zener Transient Voltage Suppressors SC-70 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: http://onsemi.com 1 2 PIN 1. ANODE 2. ANODE 3. CATHODE 3 * SC-70 Package Allows Either Two Separate Unidirectional * Working Peak Reverse Voltage Range - 22 V * Standard Zener Breakdown Voltage - 27 V * Peak Power - 40 W @ 1.0 ms (Bidirectional), per Figure 4 Waveform Body Model Low Leakage < 100 nA Flammability Rating: UL 94 V-O This is a Pb-Free Device Configurations or a Single Bidirectional Configuration SC-70 CASE 419 STYLE 4 MARKING DIAGRAM AC MG G 1 * ESD Rating of Class N (exceeding 16 kV) per the Human * * * AC = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMBZ27VCWT1G Package SC-70 (Pb-Free) Shipping 3000/Tape & Reel Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 May, 2008 - Rev. 0 1 Publication Order Number: MMBZ27VCW/D MMBZ27VCWT1G MAXIMUM RATINGS Rating Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Symbol Ppk PD RqJA TJ, Tstg Value 40 200 1.6 618 - 55 to +150 Unit Watts mW mW/C C/W C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25C per Figure 5. 2. FR-5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) I IF UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP VC VRWM IR VBR IT VBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF VC VBR VRWM IR VF IT V IPP Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage Device Marking AC VRWM Volts 22 IR @ VRWM nA 50 VBR (Note 3) (V) Min 25.65 Nom 27 Max 28.35 @ IT mA 1.0 VC @ IPP (Note 4) VC V 38 IPP A 1.0 VBR mV/5C 26 Device MMBZ27VCWT1G 3. VBR measured at pulse test current IT at an ambient temperature of 25C. 4. Surge current waveform per Figure 4 and derate per Figure 5 http://onsemi.com 2 MMBZ27VCWT1G TYPICAL CHARACTERISTICS BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) 29 BIDIRECTIONAL 28 27 26 25 - 55 + 25 + 85 TEMPERATURE (C) + 125 Figure 1. Typical Breakdown Voltage versus Temperature 10000 300 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 IR (nA) 10 1 0.1 0.01 - 40 PD , POWER DISSIPATION (mW) 100 + 25 + 85 TEMPERATURE (C) + 125 0 25 50 75 100 125 TEMPERATURE (C) 150 175 Figure 2. Typical Leakage Current versus Temperature Figure 3. Steady State Power Derating Curve tr 10 ms 100 VALUE (%) PEAK VALUE -- IPP PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 C 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) 175 200 IPP HALF VALUE -- 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 Figure 4. Pulse Waveform Figure 5. Pulse Derating Curve http://onsemi.com 3 MMBZ27VCWT1G TYPICAL APPLICATIONS VBatt Single Wire CAN Transceiver 47 mH RLoad 9.09 kW 1% * CLoad 220 pF 10% Load Bus Loss of Ground Protection Circuit GND *ESD Protection - MMBZ27VCWT1 or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. ECU Connector Figure 6. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 "Single Wire CAN Network for Vehicle Applications" specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. http://onsemi.com 4 MMBZ27VCWT1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MMBZ27VCW/D |
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